Control of morphology and wire width in InGaAs ridge quantum wires grown by atomic hydrogen-assisted selective molecular beam epitaxy

✍ Scribed by Tsutomu Muranaka; Seiya Kasai; Chao Jiang; Hideki Hasegawa

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 213 KB
• Volume: 13
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00332-6

✦ Synopsis

Growth controllabilities of morphology and wire width are systematically investigated for the InGaAs ridge quantum wires (QWRs) grown by the atomic hydrogen (H * )-assisted selective molecular beam epitaxy (MBE) growth. Detailed scanning electron microscopy (SEM), photoluminescence (PL) and magneto-transport measurements have been made. The optimal H * cleaning remarkably improves the surface morphology of the InGaAs ridge structure on which QWR is formed. The geometrical width of the wire, W , can be controlled by changing the MBE growth time of the lower InAlAs barrier layer, t InAlAs . A simple relationship, W = 9:5 nm=min t InAlAs min, has been obtained. Gate-dependent Shubnikov-de Haas (SdH) measurements on quantum wire transistor (QWRTr) structure having wrap gate (WPG) have indicated tight gate control with a maximum subband spacing of 15 meV.