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Redistribution of phosphorus implanted into silicon doped heavily with boron

โœ Scribed by E. G. Tishkovskii; V. I. Obodnikov; A. A. Taskin; K. V. Feklistov; V. G. Seryapin


Book ID
110120394
Publisher
Springer
Year
2000
Tongue
English
Weight
64 KB
Volume
34
Category
Article
ISSN
1063-7826

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