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Implantation site of boron in heavily doped silicon: A β-NMR study

✍ Scribed by H. Metzner; G. Sulzer; W. Seelinger; B. Ittermann; H. -P. Erank; B. Fischer; K. -H. Ergezinger; R. Dippel; E. Diehl; H. -J. Stöckmann; H. Ackermann

Book ID: 112744010
Publisher: Springer
Year: 1990
Tongue: English
Weight: 190 KB
Volume: 60
Category: Article
ISSN: 0304-3843
DOI: 10.1007/bf02399866

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