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Recystallization characteristics of polycrystalline silicon films amorphized by germanium ion implantation

✍ Scribed by Myeon-Koo Kang; Kenichi Akashi; Takayuki Matsui; Hiroshi Kuwano


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
806 KB
Volume
38
Category
Article
ISSN
0038-1101

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The surface topography and structure of low-pressure chemical vapour-deposited silicon Ðlms grown on the thermal oxide of (100) silicon substrates have been investigated using atomic force microscopy. The measurements have been performed on undoped as-grown samples with deposition temperatures betwe