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Photoemission studies of amorphous silicon induced by P+ ion implantation

✍ Scribed by G. Petö; J. Kanski

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
341 KB
Volume
96
Category
Article
ISSN
0038-1098

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The inÑuence of high-energy Si' irradiation on carbon-implanted silicon at low temperature was studied. C' Ions of kinetic energy 25 keV were implanted into Si(100) at room temperature with a dose density of 1 Â 1017 ions cm-2 after amorphization of the surface region by Ge' implantation at 200 keV.