Recovery mechanism of lattice defects formed in the collector region for electron-irradiated npn Si transistors

✍ Scribed by Ohyama, H. ;Nemoto, K.

• Publisher: John Wiley and Sons
• Year: 1988
• Tongue: English
• Weight: 635 KB
• Volume: 110
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.2211100241