✦ LIBER ✦

Effect of lattice defects in the collector region of npn Si transistors on the degradation ofhFE

✍ Scribed by Ohyama, H. ;Nemoto, K.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Recovery mechanism of lattice defects fo

✍ Ohyama, H. ;Nemoto, K. 📂 Article 📅 1988 🏛 John Wiley and Sons 🌐 English ⚖ 635 KB

Process of defect formation in the colle

✍ Ohyama, H. ;Nemoto, K. 📂 Article 📅 1988 🏛 John Wiley and Sons 🌐 English ⚖ 537 KB

Dose rate dependence of radiation-induce

✍ K. Hayama; K. Takakura; H. Ohyama; S. Kuboyama; E. Simoen; A. Mercha; C. Claeys 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 155 KB

Nonequilibrium Field Effect on Si in the

✍ V. E. Primachenko; O. V. Snitko; V. V. Milenin 📂 Article 📅 1965 🏛 John Wiley and Sons 🌐 English ⚖ 444 KB

Effect of Different Lattice Defects on t

✍ Yu. S. Boyarskaya; R. P. Zhitaru; V. G. Koloskova 📂 Article 📅 1967 🏛 John Wiley and Sons 🌐 English ⚖ 657 KB

Effect of Ge doping on the creation of l

✍ A.O. Ankiewicz; N.A. Sobolev; J.P. Leitão; M.C. Carmo; R.N. Pereira; J. Lundsgaa 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 418 KB