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Recombination Activity of Misfit Dislocations in Silicon

✍ Scribed by Kittler, M. ;Seifert, W. ;Higgs, V.


Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
541 KB
Volume
137
Category
Article
ISSN
0031-8965

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πŸ“œ SIMILAR VOLUMES


Recombination activity of β€œclean” and co
✍ M. Kittler; C. Ulhaq-Bouillet; V. Higgs πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 550 KB

The recombination at misfit dislocations in Si(Ge) structures was studied by the technique of electron-beam-induced current. The contrast temperature dependence was interpreted using the Schokley-Read-Hall recombination theory. Different situations were observed: either a dominance of shallow centre