✦ LIBER ✦

Recombination activity of “clean” and contaminated misfit dislocations in Si(Ge) structures

✍ Scribed by M. Kittler; C. Ulhaq-Bouillet; V. Higgs

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 550 KB
Volume: 24
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(94)90296-8

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✦ Synopsis

The recombination at misfit dislocations in Si(Ge) structures was studied by the technique of electron-beam-induced current. The contrast temperature dependence was interpreted using the Schokley-Read-Hall recombination theory. Different situations were observed: either a dominance of shallow centres (intrinsic property) or of midgap levels (contamination), or a combination of both. D-band luminescence studies support the role of contamination. The very small recombination at dislocations in as-grown material was interpreted as a passivation of the intrinsic activity.

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