✦ LIBER ✦
Two types of electron-beam-induced current behaviour of misfit dislocations in Si(Ge): experimental observations and modelling
✍ Scribed by M. Kittler; W. Seifert
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 277 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
The paper reports measurements of electron-beam-induced current contrast c vs. temperature T and beam current Ib for two misfit dislocations in a p-type Si/SiGe sample. It is demonstrated that the different behaviour observed can be explained on the basis of the Shockley-Read-Hall recombination theory. The activity of the dislocation with dc(T )/d T> 0 is controlled by deep centres while that of the other dislocation having dc( T )/d T< 0 indicates shallow centres lying about 0.075 eV from the band edge.