The Recombination Activity of Dislocations in Deformed Silicon at Low Excitation Levels
โ Scribed by Bondarenko, I. ;Castaldini, A. ;Cavallini, A.
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 363 KB
- Volume
- 137
- Category
- Article
- ISSN
- 0031-8965
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๐ SIMILAR VOLUMES
The electrical activity of dislocations has been evidenced by LBIC scanning measurements through two different distributions of dislocations for which theoretical models leading to the recombination velocity could be applied. A close experimental correlation was found between photocurrent and disloc
## Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in pโSi are revealed. The thermal annealing effect on the electrical properties o