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Real time spectroscopic ellipsometry for characterization of the crystallization of amorphous silicon by thermal annealing

✍ Scribed by M. Wakagi; H. Fujiwara; R.W. Collins


Book ID
114086356
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
196 KB
Volume
313-314
Category
Article
ISSN
0040-6090

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## Abstract The transient surface temperature and optical transmissivity profiles during the plasma annealing of amorphous silicon (a‐Si) on quartz substrate was studied using a radio‐frequency (rf) thermal plasma torch (TPT). The film crystallization promoted through solid‐phase crystallization (S