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Real-time monitoring of the growth of AlGaAs layers by dynamic optical reflectivity (DOR)

✍ Scribed by John V. Armstrong; Trevor Farrell

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
299 KB
Volume
5
Category
Article
ISSN
0961-1290

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✦ Synopsis

Real-time monitoring of the growth of AIGaAs layers by dynamic optical reflect,v,ty (DOR)

A simple optical in-situ method of characterizing the growth of AIGaAs layers is presented. The AIGaAs layers are grown by chemical beam epitaxy (CBE). The sensitivity and versatility of the dynamic optical reflectivity (DOR) method is shown and it is argued that it would be a useful addition to the growth community.

T

here is considerable interest at present in the use of optical techniques to monitor and hopefully control the growth of III-V materials. The advantages of the optical approach are commonly listed as: nondestructive, pressure independent, localized information. We describe dynamic optical reflectivity (DOR) and suggest that its simplicity and versatility make it ideally suited for in-situ growth monitoring. DOR should be compatible with any growth technique such as MOVPE. MBE and CBE.

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