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Reactive unbalanced magnetron sputtering of AIN thin films

✍ Scribed by D Búc; I Hotový; S Haščík; I C̆erven̆

Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 273 KB
Volume: 50
Category: Article
ISSN: 0042-207X
DOI: 10.1016/s0042-207x(98)00100-6

No coin nor oath required. For personal study only.

✦ Synopsis

Aluminium

nitride is of interest for potential use in various microelectronic and optoelectronic applications. C-axis oriented aluminium nitride (AINI thin films on (100) silicon were prepared by DC balanced and/or unbalanced magnetron reactive sputtering from an Al target under different deposition conditions, specifically, in various external magnetic fields of an auxiliary magnetic coil. We found a correlation between the deposition conditions and the structure, the residual stress and the microhardness of the AIN films.

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