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Reactive ion etching of silicon oxynitride formed by plasma-enhanced chemical vapor deposition

✍ Scribed by Ueno, Kazuyoshi


Book ID
121253096
Publisher
AVS (American Vacuum Society)
Year
1995
Tongue
English
Weight
418 KB
Volume
13
Category
Article
ISSN
0734-211X

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Silicon oxynitride gas barrier coatings
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Thin silicon oxynitride (SiO x N y ) has been deposited for a gas barrier layer on the surface of poly(ether sulfone) film using plasma-enhanced chemical vapor deposition (PECVD) of a mixture of hexamethyldisiloxane (HMDSO) and ammonia. The chemical structure of the deposited layer varied from organ