Silicon oxynitride gas barrier coatings on poly(ether sulfone) by plasma-enhanced chemical vapor deposition

✍ Scribed by Juno Shim; Ho Gyu Yoon; Sang-Hyun Na; Insun Kim; Soonjong Kwak

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 567 KB
• Volume: 202
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2007.10.020

✦ Synopsis

Thin silicon oxynitride (SiO x N y ) has been deposited for a gas barrier layer on the surface of poly(ether sulfone) film using plasma-enhanced chemical vapor deposition (PECVD) of a mixture of hexamethyldisiloxane (HMDSO) and ammonia. The chemical structure of the deposited layer varied from organic to inorganic structures depending on RF plasma input power applied to the reaction system. A silicon-based undercoat layer, which has an organic/inorganic hybrid structure, was used as an interfacial buffer layer between the organic PES and inorganic SiO x N y layer. With the help of the undercoat layer, the dense inorganic SiO x N y layer gave a superior oxygen barrier property of 0.2 cm 3 /m 2 day at a critical coating thickness of ca. 20 nm. In a highly stressed SiO x N y film, the effect of the undercoat layer was remarkable in preventing crack formation during bending tests.