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Reactive ion etching mechanism study on Si/GexSi1−x

✍ Scribed by E. van der Drift; T. Zijlstra; R. Cheung; K. Werner; S. Radelaar

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 529 KB
Volume: 23
Category: Article
ISSN: 0167-9317
DOI: 10.1016/0167-9317(94)90169-4

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