✦ LIBER ✦

95/06030 X-ray photoelectron spectroscopic study of the effect of ion etching of silicon carbide on a carbon fiber

Publisher: Elsevier Science
Year: 1995
Weight: 184 KB
Volume: 36
Category: Article
ISSN: 0140-6701
DOI: 10.1016/0140-6701(95)97669-b

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

X-ray photoelectron spectroscopic study

X-ray photoelectron spectroscopic study of the effect of ion etching of silicon carbide on a carbon fiber

✍ Michael A. Rooke; Peter M.A. Sherwood 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 753 KB

Silicon carbide (Sic) was chemical vapor deposited (CVD) onto a carbon fiber to investigate oxidation protection of the coating. This thin film of Sic was analyzed before and after argon and oxygen ion beam etching with core and valence band X-ray Photoelectron Spectroscopy (XPS). The valence band o

Effect of ion bombardment on CrSiO lay

Effect of ion bombardment on CrSiO layers: an X-ray photoelectron spectroscopic study

✍ I. Bertóti; A. Tóth; M. Mohai; R. Kelly; G. Marletta 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 527 KB