Effect of ion bombardment on CrSiO layers: an X-ray photoelectron spectroscopic study

X-ray photoelectron spectroscopic study

X-ray photoelectron spectroscopic study of the effect of ion etching of silicon carbide on a carbon fiber

✍ Michael A. Rooke; Peter M.A. Sherwood 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 753 KB

Silicon carbide (Sic) was chemical vapor deposited (CVD) onto a carbon fiber to investigate oxidation protection of the coating. This thin film of Sic was analyzed before and after argon and oxygen ion beam etching with core and valence band X-ray Photoelectron Spectroscopy (XPS). The valence band o