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Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence

✍ Scribed by Weman, H.; Lindström, J. L.; Oehrlein, G. S.; Svensson, B. G.

Book ID
120052262
Publisher
American Institute of Physics
Year
1990
Tongue
English
Weight
977 KB
Volume
67
Category
Article
ISSN
0021-8979

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