Electron beam induced current investigations of active electrical defects in silicon due to reactive ion etching and reactive ion beam etching processes

Electron-beam-induced current and atomic

Electron-beam-induced current and atomic force microscopy studies on silicon etch steps created by reactive ion etching and reactive ion beam etching

✍ G. Jäger-Waldau; H.-U. Habermeier; G. Zwicker; E. Bucher 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 278 KB

Reactive ion etching and reactive ion beam etching are common anisotropic etch processes in silicon microdevice fabrication. Unfortunately, they are also known to create electrically active defects in the bulk material. It is possible to detect these active defects with the electron-beam-induced cur