Reactive atom synthesis and characterization of C3N4 crystalline films

✍ Scribed by Li, Y. G.; Wee, A. T. S.; Huan, C. H. A.; Li, W. S.; Pan, J. S.

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 557 KB
• Volume: 28
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(199908)28:1<221::aid-sia581>3.0.co;2-a

✦ Synopsis

Beta

-C 3 N 4 crystalline films have been grown on Si(100) substrates by reactive atom vapour deposition. The lattice parameters of the b-C 3 N 4 crystalline phase, determined by x-ray diffraction and transmission electron diffraction, respectively, are both in good agreement with the theoretically predicted b-C 3 N 4 structure lattice constant. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy and Raman spectroscopy experiments indicate the existence of single (C-N) and double (C N) carbon-nitrogen bonds in the films. The total NC ratio in the films was determined by XPS to be 1.07, with the C-N bonds (which form the b-C 3 N 4 crystalline phase) comprising up to 58% of the film. Raman spectra revealed two resolved peaks at 1224 cm -1 and 1310 cm -1 , suggesting the formation of a fourfold coordinated C-N bond, and another two peaks at 1416 cm -1 and 1950 cm -1 implying the existence of C N bonds. Fourier transform infrared spectroscopy also confirmed the presence of sp 3 -and sp 2 -hybridized carbon atoms tetrahedrally and hexagonally bonded with nitrogen atoms. The root-mean-square roughness of the film surface was determined by atomic force microscopy to be 18.9 nm.