✦ LIBER ✦

Rare-earth oxide superlattices on Si(1 1 1)

✍ Scribed by Frank Grosse; Sergiy Bokoch; Steffen Behnke; Andre Proessdorf; Michael Niehle; Achim Trampert; Wolfgang Braun; Henning Riechert

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 477 KB
Volume: 323
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.01.031

No coin nor oath required. For personal study only.

✦ Synopsis

Digital epitaxial rare-earth oxide layers are grown on Si(1 1 1) substrates by molecular beam epitaxy at substrate temperatures as low as 200 1C. It is demonstrated by X-ray diffraction and transmission electron microscopy that coherent digital layers form with an abrupt interface to the substrate. Theoretical investigations employing density functional theory demonstrate the potential in designing physical properties by strain. The large lattice mismatch of 9% between La 2 O 3 and Lu 2 O 3 allows for an intentional variation of the internal strain in the layers over a wide range.

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Rare-earth oxide superlattices on Si(1&#xa0;1&#xa0;1)

✦ Synopsis

Rare-earth oxide superlattices on Si(1 1 1)