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Rapid thermal oxygen annealing formation of nickel silicide nanocrystals for nonvolatile memory

โœ Scribed by Zhou, Huimei; Li, Zonglin; Zheng, Jian-Guo; Liu, Jianlin

Book ID
118782255
Publisher
Springer
Year
2012
Tongue
English
Weight
384 KB
Volume
109
Category
Article
ISSN
1432-0630

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โœ Wei-Ren Chen; Ting-Chang Chang; Po-Tsun Liu; Chun-Hao Tu; Jui-Lung Yeh; Yen-Ting ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 938 KB

A new method to fabricate Ge nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application was investigated in this study. The oxidation process nucleated the Ge nanocrystals embedded in the dielectric layer was clearly observed by transmission electron microscope analysis.