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Rapid Thermal Annealing of Oxide Electrodes for Nonvolatile Ferroelectric Memory Structures

โœ Scribed by S. Aggarwal; S.R. Perusse; S. Madhukar; T.K. Song; C.L. Canedy; R. Ramesh; S. Choopun; R.P. Sharma; T. Venkatesan; S.M. Green

Book ID
110283117
Publisher
Springer US
Year
1998
Tongue
English
Weight
155 KB
Volume
2
Category
Article
ISSN
1385-3449

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โœ Wei-Ren Chen; Ting-Chang Chang; Po-Tsun Liu; Chun-Hao Tu; Jui-Lung Yeh; Yen-Ting ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 938 KB

A new method to fabricate Ge nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application was investigated in this study. The oxidation process nucleated the Ge nanocrystals embedded in the dielectric layer was clearly observed by transmission electron microscope analysis.