✦ LIBER ✦
Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
✍ Scribed by C.L. Heng; L.W. Teo; Vincent Ho; M.S. Tay; Y. Lei; W.K. Choi; W.K. Chim
- Book ID
- 108411297
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 445 KB
- Volume
- 66
- Category
- Article
- ISSN
- 0167-9317
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