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Rapid crystallization of silicon films using pulsed current-induced joule heating

✍ Scribed by T Sameshima; Y Kaneko; N Andoh

Book ID
117145571
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
329 KB
Volume
299-302
Category
Article
ISSN
0022-3093

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## Abstract A modified crystallization process using current‐induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The hig