## Abstract A modified crystallization process using currentโinduced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by ฮฑโstepper. The hig
Characterization of polycrystalline silicon thin films fabricated by rapid joule heating method
โ Scribed by T. Sameshima; K. Motai; N. Andoh
- Publisher
- Springer
- Year
- 2004
- Tongue
- English
- Weight
- 303 KB
- Volume
- 79
- Category
- Article
- ISSN
- 1432-0630
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