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Random dopant induced threshold voltage lowering and fluctuations in sub 50 nm MOSFETs: a statistical 3D `atomistic' simulation study

✍ Scribed by Asenov, Asen

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Random dopant induced threshold voltage

✍ Asenov, A. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 342 KB

Increase in the random dopant induced th

✍ Asenov, A.; Slavcheva, G.; Brown, A.R.; Davies, J.H.; Saini, S. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 168 KB

Polysilicon gate enhancement of the rand

✍ Asenov, A.; Saini, S. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 249 KB