Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D “atomistic” simulation study

✍ Scribed by Asenov, A.

• Book ID: 114537502
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 342 KB
• Volume: 45
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.735728