Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

✍ Scribed by Asenov, A.; Slavcheva, G.; Brown, A.R.; Davies, J.H.; Saini, S.

• Book ID: 114538627
• Publisher: IEEE
• Year: 2001
• Tongue: English
• Weight: 168 KB
• Volume: 48
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.915703