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Random Deposition as a Growth Mode in Atomic Layer Deposition

✍ Scribed by R.L. Puurunen

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
726 KB
Volume
10
Category
Article
ISSN
0948-1907

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Titanium isopropoxide as a precursor for
Titanium isopropoxide as a precursor for atomic layer deposition: characterization of titanium dioxide growth process
✍ Jaan Aarik; Aleks Aidla; Teet Uustare; Mikko Ritala; Markku LeskelΓ€ πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 208 KB

Atomic layer deposition ALD of titanium oxide from titanium isopropoxide Ti OCH CH and water as well as 3 2 4 Ε½ Ε½ . . Ε½ . from Ti OCH CH and hydrogen peroxide H O was studied. According to data of real-time quartz crystal 3 2 4 2 2 Ε½ . Ε½ Ε½ . . microbalance QCM measurements, adsorption of Ti OCH CH w