Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate
β Scribed by Tianfeng Li, Lizhen Gao, Wen Lei, Lijun Guo, Tao Yang, Yonghai Chen, Zhanguo Wang
- Book ID
- 119906261
- Publisher
- Springer-Verlag
- Year
- 2013
- Tongue
- English
- Weight
- 451 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1931-7573
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π SIMILAR VOLUMES
## Abstract The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vaporβliquidβsolid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, re
## Abstract We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at lowβdefect density Ge NW β