This work presents a detailed study of the subgrain structure of Si doped GaN grown on AlN buffered (111)Si substrates by plasma-assisted Molecular Beam Epitaxy. Si doping increases from an unintentionally undoped sample up to 1.7 Γ 10 19 cm -3 . The subgrain size distribution fits quite precisely a
β¦ LIBER β¦
Micro-Raman Study of Wurtzite AlN Layers Grown on Si(111)
β Scribed by Gleize, J. ;Demangeot, F. ;Frandon, J. ;Renucci, M.A. ;Kuball, M. ;Semond, F. ;Massies, J.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 95 KB
- Volume
- 188
- Category
- Article
- ISSN
- 0031-8965
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