𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Raman study of self-assembled GaAs and AlAs islands embedded in InAs

✍ Scribed by Tenne, D. A.; Haisler, V. A.; Toropov, A. I.; Bakarov, A. K.; Gutakovsky, A. K.; Zahn, D. R. T.; Shebanin, A. P.

Book ID
121405405
Publisher
The American Physical Society
Year
2000
Tongue
English
Weight
355 KB
Volume
61
Category
Article
ISSN
1098-0121

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Self-Assembled Islands in the (Ga,Al)As/
Self-Assembled Islands in the (Ga,Al)As/InAs Heteroepitaxial System Studied by Raman Spectroscopy
✍ D.A. Tenne; V.A. Haisler; A.K. Bakarov; A.I. Toropov; A.K. Gutakovsky; A.P. Sheb πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 116 KB πŸ‘ 1 views

Phonon spectra of self-assembled GaAs and AlAs nanometer-sized islands in an InAs matrix as well as InAs quantum dots embedded in AlAs were studied by Raman spectroscopy. Large straininduced shifts of optical phonon lines of the islands from respective bulk values were observed. The experimental pho

Comparative study of GaAs-based 1.5 micr
Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
✍ Gladyshev, A. G. ;Kryzhanovskaya, N. V. ;Nadtochy, A. M. ;Semenova, E. S. ;Zhuko πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 223 KB

## Abstract Optical properties of self‐organized QDs grown on thick metamorphic InGaAs layers with different In composition are studied. The dots are formed by an overgrowth of original InAs islands with thin InGaAs or InAlAs layers. Room temperature photoluminescence at 1.55 Β΅m is demonstrated for