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Raman study of self-assembled InAs quantum dots embedded in AlAs: influence of growth temperature

✍ Scribed by D.A Tenne; A.K Bakarov; A.I Toropov; D.R.T Zahn

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
84 KB
Volume
13
Category
Article
ISSN
1386-9477

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Initial stages of self-assembled growth of InAs dots on GaAs 001 and a postgrowth evolution of the deposited surface Ε½ . Ε½ . have been investigated by reflectance-difference RD spectroscopy and reflection high-energy electron diffraction RHEED . Ε½ . A significant change in the RD spectrum occurs e