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Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots

✍ Scribed by Gladyshev, A. G. ;Kryzhanovskaya, N. V. ;Nadtochy, A. M. ;Semenova, E. S. ;Zhukov, A. E. ;Vasil'ev, A. P. ;Mikhrin, V. S. ;Musikhin, Yu. G. ;Maximov, M. V. ;Ledentsov, N. N. ;Ustinov, V. M.

Book ID
105363739
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
223 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Optical properties of self‐organized QDs grown on thick metamorphic InGaAs layers with different In composition are studied. The dots are formed by an overgrowth of original InAs islands with thin InGaAs or InAlAs layers. Room temperature photoluminescence at 1.55 Β΅m is demonstrated for the sample with 27% In composition in the matrix. The overgrowth with InAlAs layers permits to eliminate the wetting layer states and increase energy separation between QD ground and excited states. (Β© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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✍ X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 398 KB

We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum