The structural and the optical propertics of lnAs layers grown on high index GaAs surfaces by molecular beam epitaxy are investigated in order to understand the formation and the self-organization of quantum dots (Ql)s) on novel index surfaces. Four different GaAs substrate orientations have been ex
โฆ LIBER โฆ
Structural and optical characterization of InAs/InGaAs self-assembled quantum dots grown on (311)B GaAs
โ Scribed by Nishi, Kenichi; Mirin, Richard; Leonard, Devin; Medeiros-Ribeiro, Gilberto; Petroff, Pierre M.; Gossard, Arthur C.
- Book ID
- 121489672
- Publisher
- American Institute of Physics
- Year
- 1996
- Tongue
- English
- Weight
- 457 KB
- Volume
- 80
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.363216
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We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum