✦ LIBER ✦

Characterization and Analysis of 1.3-μm InAs/InGaAs Self-Assembled Quantum Dot Lasers

✍ Scribed by Liu, Chongyang; Wang, Hong; Meng, Qianqian

Book ID: 121802048
Publisher: IEEE
Year: 2014
Tongue: English
Weight: 554 KB
Volume: 13
Category: Article
ISSN: 1536-125X
DOI: 10.1109/TNANO.2013.2288320

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Two-state competition in 1.3 μm multilay

Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers

✍ Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. 📂 Article 📅 2009 🏛 American Institute of Physics 🌐 English ⚖ 550 KB

Carrier distribution, gain, and lasing i

Carrier distribution, gain, and lasing in 1.3-μm InAs-InGaAs quantum-dot lasers

✍ Dikshit, A.A.; Pikal, J.M. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 277 KB

Thermal Effects and Small Signal Modulat

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers

✍ HX Zhao; SF Yoon; CZ Tong; CY Liu; R Wang; Q Cao 📂 Article 📅 2010 🏛 Springer-Verlag 🌐 English ⚖ 437 KB

Performance and physics of quantum-dot l

Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-/spl mu/m emitting InGaAs quantum dots

✍ Sugawara, M.; Mukai, K.; Nakata, Y.; Otsubo, K.; Ishilkawa, H. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 530 KB

InAs–GaAs self-assembled quantum dot las

InAs–GaAs self-assembled quantum dot lasers: physical processes and device characteristics

✍ D.J. Mowbray; L. Harris; P.W. Fry; A.D. Ashmore; S.R. Parnell; J.J. Finley; M.S. 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 129 KB

The gain characteristics of InAs-GaAs self-assembled quantum dot lasers are studied using two complementary techniques. The modal gain is derived from a measurement of the normal incidence, inter-band photoconductivity. For a device containing a single layer of dots the maximum modal gain of the gro

InAs∕InGaAs∕GaAs quantum dot lasers of 1

InAs∕InGaAs∕GaAs quantum dot lasers of 1.3 [micro sign]m range with high (88%) differential efficiency

✍ Kovsh, A.R.; Maleev, N.A.; Zhukov, A.E.; Mikhrin, S.S.; Vasil'ev, A.P.; Shernyak 📂 Article 📅 2002 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 278 KB

Characterization and Analysis of 1.3-&#x03BC;m InAs/InGaAs Self-Assembled Quantum Dot Lasers

Characterization and Analysis of 1.3-μm InAs/InGaAs Self-Assembled Quantum Dot Lasers