We report about spatially resolved magneto-optical experiments on a self-assembled InGaAs quantum dot. Using electron beam lithograpy for patterning a metal shadow mask we can isolate a single dot. This allows us to study the optical response of a single dot as a function of excitation power and mag
Localized excitons in InAs self-assembled quantum dots embedded in InGaAs/GaAs multi-quantum wells
β Scribed by Torchynska, T. V. ;Casas Espinola, J. L. ;Eliseev, P. G. ;Stintz, A. ;Malloy, K. J. ;Pena Sierra, R.
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 126 KB
- Volume
- 195
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum
Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo