𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Capacitance-voltage measurements in InAs-GaAs self-assembled quantum dots

✍ Scribed by A. F. G. Monte; P. C. Morais; Fanyao Qu; M. Hopkinson


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
95 KB
Volume
2
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Size quantization patterns in self-assem
✍ M. Colocci; F. Bogani; L. Carraresi; R. Mattolini; A. Bosacchi; S. Franchi; P. F πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 136 KB

Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo