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Raman study of Fano interference in p-type doped silicon

✍ Scribed by Brian G. Burke; Jack Chan; Keith A. Williams; Zili Wu; Alexander A. Puretzky; David B. Geohegan

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
317 KB
Volume
41
Category
Article
ISSN
0377-0486

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Rigorous hole band structure calculation
Rigorous hole band structure calculations of p-type Ξ΄-doping superlattices in silicon
✍ A.L Rosa; L.M.R Scolfaro; J.R Leite; G.M Sipahi πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 77 KB

Self-consistent hole band structure calculations are performed for p-type Ξ΄-doped quantum wells and superlattices (SLs) in Si by solving the six-band Luttinger-Kohn effective mass equations, together with Poisson equation, in a plane-wave representation. Nonparabolicities due to couplings between he