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A new experimental determination of the relationship between the Hall mobility and the hole concentration in heavily doped p-type silicon

โœ Scribed by Y. Sasaki; K. Itoh; E. Inoue; S. Kishi; T. Mitsuishi


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
839 KB
Volume
31
Category
Article
ISSN
0038-1101

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