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Raman scattering study on pristine and oxidized n-type porous silicon

✍ Scribed by Zhong, Furu; JIA, Zhen-hong

Book ID: 121452498
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 567 KB
Volume: 411
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2012.09.061

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## Abstract In this paper, porous silicon (PS) layers of different porosity and thickness have been investigated by Raman spectroscopy. The estimation of built‐in strain in PS is reported. Moreover, wetting phenomena in PS layers have been also investigated. The results prove a reversible blue shif