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Raman scattering and photoluminescence studies on O+ implanted porous silicon

✍ Scribed by R. Prabakaran; R. Kesavamoorthy; S. Amirthapandian; A. Ramanand

Book ID
116730672
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
211 KB
Volume
58
Category
Article
ISSN
0167-577X

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Depth profiles of photoluminescence (PL) and Raman scattering properties of anodized porous Si have been studied by micro-measurement techniques. The depthstructural-inhomogeneity strongly affects the optical properties of porous Si. The Si 2p absorption edge of porous Si has been examined with sync