Photoluminescence and Raman scattering spectra from porous silicon
β Scribed by Koichi Inoue; Kenzo Maehashi; Hisao Nakashima; Osamu Matsuda; Kazuo Murase
- Book ID
- 103918945
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 316 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
β¦ Synopsis
Depth profiles of photoluminescence (PL) and Raman scattering properties of anodized porous Si have been studied by micro-measurement techniques. The depthstructural-inhomogeneity strongly affects the optical properties of porous Si. The Si 2p absorption edge of porous Si has been examined with synchrotron radiation. It is concluded that the PL blue-shift correlates with the low-energy shift of the Raman peak and with the high-energy shift of the Si 2p absorption edge.
π SIMILAR VOLUMES
The e β ect of di β erent polarization orientations of the excitation source on the Raman and photoluminescence (PL) spectra of a porous silicon (PS) layer within two di β erent micro-regions was investigated. Two micro-regions (2 lm) along the (100) direction were studied, close to the crystalline sil