Depth profiles of photoluminescence (PL) and Raman scattering properties of anodized porous Si have been studied by micro-measurement techniques. The depthstructural-inhomogeneity strongly affects the optical properties of porous Si. The Si 2p absorption edge of porous Si has been examined with sync
β¦ LIBER β¦
Anomalous polarization of Raman scattering spectra from porous silicon
β Scribed by M. E. Kompan; V. B. Kulik; I. I. Novak; J. Salonen; A. V. Subashiev
- Book ID
- 110146499
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 1998
- Tongue
- English
- Weight
- 91 KB
- Volume
- 67
- Category
- Article
- ISSN
- 0021-3640
- DOI
- 10.1134/1.567645
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The e β ect of di β erent polarization orientations of the excitation source on the Raman and photoluminescence (PL) spectra of a porous silicon (PS) layer within two di β erent micro-regions was investigated. Two micro-regions (2 lm) along the (100) direction were studied, close to the crystalline sil