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Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon

โœ Scribed by Seo, Y. H.; Lee, H.-J.; Jeon, H. I.; Oh, D. H.; Nahm, K. S.; Lee, Y. H.; Suh, E.-K.; Lee, H. J.; Kwang, Y. G.


Book ID
120523229
Publisher
American Institute of Physics
Year
1993
Tongue
English
Weight
590 KB
Volume
62
Category
Article
ISSN
0003-6951

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Photoluminescence and Raman scattering s
โœ Koichi Inoue; Kenzo Maehashi; Hisao Nakashima; Osamu Matsuda; Kazuo Murase ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 316 KB

Depth profiles of photoluminescence (PL) and Raman scattering properties of anodized porous Si have been studied by micro-measurement techniques. The depthstructural-inhomogeneity strongly affects the optical properties of porous Si. The Si 2p absorption edge of porous Si has been examined with sync