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Study of strain and wetting phenomena in porous silicon by Raman scattering

✍ Scribed by M. A. Ferrara; M. G. Donato; L. Sirleto; G. Messina; S. Santangelo; I. Rendina

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
207 KB
Volume
39
Category
Article
ISSN
0377-0486

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✦ Synopsis

Abstract

In this paper, porous silicon (PS) layers of different porosity and thickness have been investigated by Raman spectroscopy. The estimation of built‐in strain in PS is reported. Moreover, wetting phenomena in PS layers have been also investigated. The results prove a reversible blue shift of Raman spectra of wetted PS layers with respect to unperturbed layers. We ascribe the shift to a compressive stress due to the increased lattice mismatch between the PS layer and the bulk silicon substrate in wetting conditions. Copyright Β© 2008 John Wiley & Sons, Ltd.

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## Abstract Three types of Ag‐coated arrays from porous anodic aluminum oxide (AAO) were prepared and studied as substrates for surface‐enhanced Raman scattering (SERS). They were compared with Ag‐coated porous silicon (PSi) samples. AAO‐based substrates were prepared by the vapor deposition of sil