Raman-scattering characterization of InN
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Jung Gon Kim; Yasuhito Kamei; Atsuhito Kimura; Noriyuki Hasuike; Hiroshi Harima;
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Article
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2011
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John Wiley and Sons
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English
⚖ 485 KB
## Abstract Improvement of hexagonal InN film quality grown by metal‐organic vapor phase epitaxy has been challenged by changing the ambient‐gas pressure in 87–320 kPa (∼1–3 atm.). The growth temperature and the source‐gas supply ratio, the so‐called V/III ratio, were optimized at each ambient‐gas