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Raman scattering of cadmium oxide epilayers grown by metal-organic vapor phase epitaxy

✍ Scribed by Cusco, R.; Ibanez, J.; Domenech-Amador, N.; Artus, L.; Zuniga-Perez, J.; Munoz-Sanjose, V.


Book ID
118051076
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
394 KB
Volume
107
Category
Article
ISSN
0021-8979

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## Abstract Improvement of hexagonal InN film quality grown by metal‐organic vapor phase epitaxy has been challenged by changing the ambient‐gas pressure in 87–320 kPa (∼1–3 atm.). The growth temperature and the source‐gas supply ratio, the so‐called V/III ratio, were optimized at each ambient‐gas